By G. Randy Slone
THE AUDIOPHILE’S venture SOURCEBOOK
Build audio initiatives that produce nice sound for much lower than they price within the shop, with audio hobbyists’ favourite author Randy Slone. within the Audiophile’s undertaking Sourcebook, Slone offers you―
• transparent, illustrated schematics and directions for high quality, high-power digital audio elements for you to construct at home
• conscientiously developed designs for nearly all normal high-end audio initiatives, subsidized through an writer who solutions his email
• eight power-amp designs that swimsuit almost any need
• directions for making your personal low-cost checking out equipment
• understandable causes of the electronics at paintings within the tasks you must build, spiced with humor and perception into the electronics hobbyist’s process
• whole components lists
"The Audiophile's venture Sourcebook" is with out the hype, superstition, myths, and dear fanaticism frequently linked to 'high-end' audio platforms. It presents straight forward assist in construction and figuring out first-class audio digital tasks which are according to strong technology and bring brilliant sound!
THE initiatives you will have, FOR LESS
Balanced enter driver/receiver circuits
Signal conditioning techniques
Preamps for domestic and stage
Passive and energetic filters
Bi-amping and tri-amping filters
Speaker safety systems
Clip detection circuits
Homemade try out equipment
Read or Download The Audiophile's Project Sourcebook: 80 High-Performance Audio Electronics Projects PDF
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Additional resources for The Audiophile's Project Sourcebook: 80 High-Performance Audio Electronics Projects
The reason is, the gate capacitance of the P-channel units (i. e. , approximately 900 pF) is greater than the gate capacitance of the N-channel units (i. e. , approximately six hundred pF). relating to building info, L1 is shaped via winding 18 turns of #14-AWG magnet cord round a ½-in shape. The heatsinking requirement for the L-MOSFET output units is ready almost like for the former Fig. 6-15 layout. Transistors Q1, Q9, Q10 and Q11 can be fixed to small TO-220 heatsinks. The size of the relationship wiring to the L-MOSFET gate leads will be saved to minimal. If lead lengths longer than approximately 6” to nine” are required, it's best to solder the gate resistors on to the L-MOSFET leads, and run the longer connection wiring from the other finish of the gate resistors. the rest building specifications are kind of like for any of the opposite formerly mentioned amplifier designs. determine 6-20 illustrates a lower-power L-MOSFET amplifier layout, incorporating the L-MOSFET output units in a complementary-feedback configuration with predriver bipolar transistors. observe that the L-MOSFET equipment varieties are reversed, and they're positioned “upside-down” within the circuit (i. e. , the resources hook up with the ability provide rails). Such output degree configurations are usually referred to as hybrid designs, simply because they include either bipolar and MOSFET units in the degree layout. As when it comes to different complementary-feedback designs, the neighborhood suggestions loop inherent to the output degree layout presents for more desirable linearity over extra traditional source-follower topologies. determine 6. 20 A complementary-feedback L-MOSFET high-performance amplifier. you could observe that capacitors C18 and C17 were further to the single-slope safety circuit. they're hooked up from the collector to the bottom of the security transistors, Q12 and Q13. those might be ceramic disc kinds, and their functionality is to minimize instability results in the course of overload stipulations. The deploy of such capacitors inside of safety networks is an efficient strategy to persist with in just about all safeguard circuitry The THD functionality of this layout is similar to the easiest bipolar emitter-follower designs. The THD functionality measured at 1 kHz @ 0-dB degrees comes out to zero. 003%, with worst-case functionality at approximately zero. 01%. the utmost output strength is simply a little over 90-W RMS into 8-ohm lots. The SNR functionality could be greater than –100 dB (this is an easier layout, with no using the enter cascode level and low-noise differential enter transistors). The bandwidth is five Hz to a hundred kHz, with an 800-mV enter sensitivity and 10-kohm enter impedance. the development info for the Fig. 6-20 amplifier are just like the former designs. Transistors Q7, Q8, Q9, Q14, and Q15 will be fastened to small TO-220 variety heatsinks. considering that bipolar transistors are used as predriver devices, it can be crucial to supply temperature reimbursement for the predriver transistors (this is to keep up stable balance of the quiescent bias currents of the L-MOSFET output devices).